this is information on a product in full production. march 2013 docid023113 rev 1 1/9 9 STTH1008DTI 800 v tandem hyperfast diode datasheet ? production data features ? high voltage rectifier ? tandem diodes in series ? very low switching losses ? insulated device with internal ceramic ? equal thermal conditions for both 400 v diodes ? static and dynamic equ ilibrium of internal diodes are warranted by design description the STTH1008DTI is an ultrahigh performance diode composed of two 400 v dice in series. table 1. device summary i f(av) 10 a i frm 20 a v rrm 800 v t rr 40 ns i rm 8.5 a v f 1.7 v t j 150 c to-220ac ins STTH1008DTI a a k k www.st.com
characteristics STTH1008DTI 2/9 docid023113 rev 1 1 characteristics to evaluate the conduction loss es use the following equation: p = 1.65 x i f(av) + 0.04 x i f 2 (rms) table 2. absolute ratings (limiting values per diode at 25 c, unless otherwise specified) symbol parameter value unit v rrm repetitive peak reverse voltage 800 v i f(rms) forward rms current 16 a i f(av) average forward current, ? = 0.5 t c = 85 c 10 a i frm repetitive peak forward current t c = 135 c, ?? = 0.3 20 a i fsm surge non repetitive forward current t p = 10 ms sinusoidal 120 a t stg storage temperature range -65 to +175 c t j maximum junction temperature 150 c table 3. thermal resistance symbol parameter value unit r th(j-c) junction to case 2.5 c/w table 4. static electrical characteristics symbol parameters test conditions min. typ max. unit i r (1) reverse leakage current t j = 25 c v r = v rrm 20 a t j = 150 c 20 200 v f (2) forward voltage drop t c = 25 c i f = 10 a 2.15 2.5 v t c = 150 c 1.7 2.05 t c = 25 c i f = 20 a 2.45 2.85 t c = 150 c 2.05 2.45 1. pulse test: t p = 5 ms, ? < 2% 2. pulse test: t p = 380 s, ? < 2%
docid023113 rev 1 3/9 STTH1008DTI characteristics table 5. dynamic electrical characteristics symbol parameters test conditions min. typ max. unit i rm reverse recovery current t j = 125 c i f = 10 a, v r = 400 v, di f /dt = -200 a/s 8.5 11.5 a s factor softness factor 0.8 t rr reverse recovery time t j = 25 c i f = 1 a, v r = 30 v, di f /dt = -50 a/s 40 55 ns t j = 125 c i f = 10 a, v r = 400 v, di f /dt = -200 a/s 80 t fr forward recovery time t j = 25 c i f = 10 a, v fr = 3 v, di f /dt = 100 a/s 180 ns v fp forward recovery voltage t j = 25 c 4.5 7 v figure 1. conduction losses versus average current figure 2. forward voltage drop versus forward current (typical values) p f(av) (w) 0 4 8 12 16 20 24 28 32 0 1 2 3 4 5 6 7 8 9 10 11 12 13 t =tp/t tp i f(av) (a) =0.05 =0.1 =0.2 =0.5 =1 i fm (a) 0.1 1.0 10.0 100.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 t j =25 c t j =125 c t j =150 c v fm (v) figure 3. relative variation of thermal impedance junction to case versus pulse duration figure 4. peak reverse recovery current versus di f /dt (typical values) z t h (j-c) /r t h (j-c) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 single pulse t p (s) i rm (a) 0 2 4 6 8 10 12 14 16 18 0 50 100 150 200 250 300 350 400 450 500 i f =i f(av) v r =400 v t j =125 c di f /dt(a/s)
characteristics STTH1008DTI 4/9 docid023113 rev 1 figure 5. reverse recovery time versus di f /dt (typical values) figure 6. reverse recovery charges versus di f /dt (typical values) t rr (ns) 0 20 40 60 80 100 120 140 160 180 200 0 50 100 150 200 250 300 350 400 450 500 i f =i f(av) v r =400 v t j =125 c di f /dt(a/s) q rr (nc) 0 100 200 300 400 500 600 0 50 100 150 200 250 300 350 400 450 500 i f =i f(av) v r =400 v t j =125 c di f /dt(a/s) figure 7. reverse recovery softness factor versus di f /dt (typical values) figure 8. relative variations of dynamic parameters versus junction temperature s fact or 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 50 100 150 200 250 300 350 400 450 500 i f =i f(av) v r =400 v t j =125 c di f /dt(a/s) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 25 50 75 100 125 i f =i f(av) v r =400 v reference: t j =125 c i rm s factor q rr t j (c) figure 9. transient peak forward voltage versus di f /dt (typical values) figure 10. forward recovery time versus di f /dt (typical values) v fp (v) 0 2 4 6 8 10 0 50 100 150 200 250 300 350 400 450 500 i f =i f(av) t j =125 c di f /dt(a/s) t fr (ns) 0 20 40 60 80 100 120 140 100 150 200 250 300 350 400 450 500 i f =i f(av) v fr =3v t j =125 c di f /dt(a/s)
docid023113 rev 1 5/9 STTH1008DTI characteristics figure 11. junction capacitance versus reverse voltage applied (typical values) c(pf) 1 10 100 1 10 100 1000 f=1 mhz v osc =30 mv rms t j =25 c v r (v)
package information STTH1008DTI 6/9 docid023113 rev 1 2 package information ? epoxy meets ul94, v0 ? cooling method: by conduction (c) ? recommended torque: 0.4 to 0.6 nm in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions a nd product status are available at: www.st.com . ecopack ? is an st trademark. figure 12. to-220ac ins dimension definitions c b2 c2 f ? i l a a1 a2 b e b1 i4 l2 c1 m
docid023113 rev 1 7/9 STTH1008DTI package information table 6. to-220ac ins dimension values ref. dimensions millimeters inches min. typ. max. min. typ. max. a 15.20 15.90 0.598 0.625 a1 3.75 0.147 a2 13.00 14.00 0.511 0.551 b 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 c 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 4.80 5.40 0.189 0.212 f 6.20 6.60 0.244 0.259 ?i 3.75 3.85 0.147 0.151 i4 15.80 16.40 16.80 0.622 0.646 0.661 l 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 m 2.60 0.102
ordering information STTH1008DTI 8/9 docid023113 rev 1 3 ordering information 4 revision history table 7. ordering information ordering code marking package weight base qty delivery mode STTH1008DTI STTH1008DTI to-220ac insulated 2.3 g 50 tube table 8. document revision history date revision changes 05-mar-2013 1 initial release.
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